A BOND WIRE DEGRADATION MONITORING METHOD FOR WIRE-BONDED IGBT MODULES BASED ON COLLECTOR-EMITTER VOLTAGE INITIAL-VALUE CORRECTION

Yang Peng; Tian Yuan; Gao Shuguo; Zhu Ruimin; Luo Xi; Xing Chao

doi:10.19912/j.0254-0096.tynxb.2024-2188

PDF(2681 KB)

Acta Energiae Solaris Sinica ›› 2026, Vol. 47 ›› Issue (4) : 114-125. DOI: 10.19912/j.0254-0096.tynxb.2024-2188

A BOND WIRE DEGRADATION MONITORING METHOD FOR WIRE-BONDED IGBT MODULES BASED ON COLLECTOR-EMITTER VOLTAGE INITIAL-VALUE CORRECTION

Yang Peng¹, Tian Yuan¹, Gao Shuguo¹, Zhu Ruimin², Luo Xi², Xing Chao¹

Author information +

History +

Abstract

The collector-emitter saturation voltage （V_ce,sat） of an insulated gate bipolar transistor（IGBT） module increases with bond wire lift-off, making it a common characteristic parameter for degradation monitoring. However, during actual operation, V_ce,sat is influenced by both junction temperature （T_j） and collector current （I_c）. This paper proposes a bond wire degradation monitoring method for wire-bonded IGBT modules based on initial-value correction of the collector-emitter voltage characteristic parameter. By mathematically modeling the IGBT output characteristic curves at different temperatures, the relationships amongT_j,I_c, and V_ce,sat are analyzed, and an equation for calculating the theoretical V_ce,sat under varying T_j and I_c conditions is established. During monitoring, this equation is used to compute the initial V_ce,sat corresponding to actual T_j and I_c under different operating conditions, thereby achieving initial-value correction for the normalized increase ηin saturation voltage. This correction reduces the influence of T_j and I_c onη. In this study, bond wire degradation was simulated by deliberately cutting wires, and changes in ηbefore and after correction were compared. The results show that, prior to the failure threshold, the proposed method significantly mitigates the effects of T_j and I_c onη, ensuring that the increase in V_ce,sat is primarily attributable to bond wire degradation. The experimental results align well with theoretical analysis, confirming the feasibility and engineering applicability of this method for monitoring bond wire failure in IGBT modules under varying operating conditions.

Key words

insulated gate bipolar transistor （IGBT） / condition monitoring / bond wire / accelerated aging test / saturation voltage drop / failure

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations

Yang Peng, Tian Yuan, Gao Shuguo, Zhu Ruimin, Luo Xi, Xing Chao. A BOND WIRE DEGRADATION MONITORING METHOD FOR WIRE-BONDED IGBT MODULES BASED ON COLLECTOR-EMITTER VOLTAGE INITIAL-VALUE CORRECTION[J]. Acta Energiae Solaris Sinica. 2026, 47(4): 114-125 https://doi.org/10.19912/j.0254-0096.tynxb.2024-2188

References

[1] 任磊, 韦徵, 龚春英, 等. 电力电子电路功率器件故障特征参数提取技术综述[J]. 中国电机工程学报, 2015, 35(12): 3089-3101.
REN L, WEI Z, GONG C Y, et al.Fault feature extraction techniques for power devices in power electronic converters: a review[J]. Proceedings of the CSEE, 2015, 35(12): 3089-3101.
[2] 郑荣亮, 王有元, 刘黎, 等. 考虑热不平衡特征的MMC功率模块寿命预测[J]. 太阳能学报, 2024, 45(2): 368-375.
ZHENG R L, WANG Y Y, LIU L, et al.Lifetime estimation of MMC power modules considering thermal imbalance characteristics[J]. Acta energiae solaris sinica, 2024, 45(2): 368-375.
[3] YANG S Y, XIANG D W, BRYANT A, et al.Condition monitoring for device reliability in power electronic converters: a review[J]. IEEE transactions on power electronics, 2010, 25(11): 2734-2752.
[4] 金锐, 于坤山, 张朋, 等. IGBT器件的发展现状以及在智能电网中的应用[J]. 智能电网, 2013, 1(2): 11-16.
JIN R, YU K S, ZHANG P, et al.Development of IGBT devices and the typical application in the smart grid[J]. Smart grid, 2013, 1(2): 11-16.
[5] 肖飞, 刘宾礼, 罗毅飞, 等. IGBT疲劳失效机理及其健康状态监测[M]. 北京: 机械工业出版社, 2019.
XIAO F, LIU B L, LUO Y F, et al.Fatigue failure mechanisms and health monitoring for IGBTs[M]. Beijing: China Machine Press, 2019.
[6] 顾殿杰, 谢露红, 邓二平, 等. 考虑阈值电压漂移的SiC MOSFET功率循环寿命修正技术[J]. 半导体技术, 2024, 49(11): 1008-1015.
GU D J, XIE L H, DENG E P, et al.Power cycling lifetime correction technique for SiC MOSFET considering threshold voltage drift[J]. Semiconductor technology, 2024, 49(11): 1008-1015.
[7] 李亚萍, 周雒维, 孙鹏菊, 等. 基于模块跨导的IGBT键合线健康状态准在线监测方法[J]. 中国电机工程学报, 2018, 38(23): 7035-7044.
LI Y P, ZHOU L W, SUN P J, et al.A quasi-online method monitoring healthy state of bond wires in IGBTs based on module transconductance[J]. Proceedings of the CSEE, 2018, 38(23): 7035-7044.
[8] 孙海峰, 张红玉, 蔡江. 基于模块导通电阻的碳化硅MOSFET键合线健康状态评估方法[J]. 华北电力大学学报(自然科学版), 2020, 47(2): 74-80, 88.
SUN H F, ZHANG H Y, CAI J.Method of health state evaluation of SiC MOSFET bonding wires based on module on state resistance[J]. Journal of North China Electric Power University(natural science edition), 2020, 47(2): 74-80, 88.
[9] CHOI U M, BLAABJERG F, JØRGENSEN S, et al. Reliability improvement of power converters by means of condition monitoring of IGBT modules[J]. IEEE transactions on power electronics, 2017, 32(10): 7990-7997.
[10] JING L, DU M X, WEI K X, et al.A health monitoring method for bond wires in IGBT modules based on voltage ringing characteristics[J]. IEEE transactions on electron devices, 2019, 66(9): 3953-3960.
[11] WANG K H, ZHOU L W, SUN P J, et al.Monitoring bond wire defects of IGBT module using module transconductance[J]. IEEE journal of emerging and selected topics in power electronics, 2021, 9(2): 2201-2211.
[12] 姚芳, 王少杰, 李志刚, 等. 基于IGBT模块热阻的状态评估研究[J]. 现代电子技术, 2017, 40(10): 133-137.
YAO F, WANG S J, LI Z G, et al.Research on IGBT module state assessment based on thermal resistance[J]. Modern electronics technique, 2017, 40(10): 133-137.
[13] MANDEYA R, CHEN C L, PICKERT V, et al.Gate-emitter pre-threshold voltage as a health-sensitive parameter for IGBT chip failure monitoring in high-voltage multichip IGBT power modules[J]. IEEE transactions on power electronics, 2019, 34(9): 9158-9169.
[14] 李游, 曹继伟, 郝光耀, 等. 基于阈值电压的IGBT芯片疲劳失效模型[J]. 应用科学学报, 2022, 40(5): 865-875.
LI Y, CAO J W, HAO G Y, et al.Fatigue failure model of IGBT chip based on threshold voltage[J]. Journal of applied sciences, 2022, 40(5): 865-875.
[15] YANG J X, CHE Y B, GUO X J, et al.In situ monitoring chip failure in multichip IGBT modules using turn-on delay time extracted from auxiliary emitter voltage[J]. IEEE journal of emerging and selected topics in power electronics, 2024, 12(3): 2912-2922.
[16] 孙俊忠, 刘宾礼. 基于IGBT芯片疲劳机理的关断时间可靠性模型[J]. 电力电子技术, 2014, 48(11): 73-76.
SUN J Z, LIU B L.Reliability model of turn-off time based on chip fatigue mechanism of IGBT[J]. Power electronics, 2014, 48(11): 73-76.
[17] YANG Y Y, ZHANG P J.A novel bond wire fault detection method for IGBT modules based on turn-on gate voltage overshoot[J]. IEEE transactions on power electronics, 2021, 36(7): 7501-7512.
[18] 柴育恒, 葛兴来, 张林林, 等. 一种基于开通栅极电压的新型IGBT键合线老化监测方法[J]. 中国电机工程学报, 2024, 44(1): 244-255.
CHAI Y H, GE X L, ZHANG L L, et al.A novel bonding wires aging monitoring method for IGBT based on the turn-on gate voltage[J]. Proceedings of the CSEE, 2024, 44(1): 244-255.
[19] 杜明星, 信金蕾, 姚婉荣, 等. 计及热电耦合效应的SiC MOSFET阈值电压精确监测方法[J]. 太阳能学报, 2023, 44(2): 445-452.
DU M X, XIN J L, YAO W R, et al.Accurate monitoring method of SiC mosfet threshold voltage considering thermoelectric coupling effect[J]. Acta energiae solaris sinica, 2023, 44(2): 445-452.
[20] 董超, 韦虎俊, 尹金良, 等. 基于EMR与V_{eE_peak}组合电参数的IGBT模块封装老化监测[J]. 太阳能学报, 2024, 45(11): 1-8.
DONG C, WEI H J, YIN J L, et al.Packaging aging monitoring based on EMR and V_{eE_peak} combined electrical parameters in IGBT module[J]. Acta energiae solaris sinica, 2024, 45(11): 1-8.
[21] SINGH A, ANURAG A, ANAND S.Evaluation of vce at inflection point for monitoring bond wire degradation in discrete packaged IGBTs[J]. IEEE transactions on power electronics, 2017, 32(4): 2481-2484.
[22] 戴健, 葛兴来, 杨旭, 等. 基于动态自适应参考值的牵引整流器IGBT键合线老化状态监测方法[J]. 中国电机工程学报, 2022, 42(7): 2650-2662.
DAI J, GE X L, YANG X, et al.A condition monitoring method for IGBT bond wires aging in traction rectifiers based on the dynamic adaptive reference values[J]. Proceedings of the CSEE, 2022, 42(7): 2650-2662.
[23] 杨健, 丁娜. 借助红外热像仪分析电气隐患[J]. 电气开关, 2013, 51(1): 101-103, 106.
YANG J, DING N.Analying electrical trouble by an infrared thermal imaging system[J]. Electric switchgear, 2013, 51(1): 101-103, 106.
[24] PENG Y Z, WANG Q, WANG H R, et al.An on-line calibration method for TSEP-based junction temperature estimation[J]. IEEE transactions on industrial electronics, 2022, 69(12): 13616-13624.
[25] 胡姚刚, 李辉, 白鹏飞, 等. 基于壳温差的风电变流器IGBT模块基板焊层健康状态评估[J]. 太阳能学报, 2020, 41(4): 194-204.
HU Y G, LI H, BAI P F, et al.Health assessment of base plate solder of IGBT module in wind power converter based on shell temperature difference[J]. Acta energiae solaris sinica, 2020, 41(4): 194-204.
[26] 张省伟, 王博. IGBT模块集成NTC的应用研究[J]. 工业仪表与自动化装置, 2019(5): 87-90.
ZHANG S W, WANG B.Research on the application of the integrated NTC in IGBT module[J]. Industrial instrumentation & automation, 2019(5): 87-90.
[27] 周文森, 黄金屏, 陈岫. 新编实用电工手册[M]. 北京: 北京科学技术出版社, 2000.
ZHOU W S, HUANG J P, CHEN X.New practical electrical engineering handbook[M]. Beijing: Beijing Science & Technology Press, 2000.
[28] 唐勇, 汪波, 陈明, 等. 高温下的IGBT可靠性与在线评估[J]. 电工技术学报, 2014, 29(6): 17-23.
TANG Y, WANG B, CHEN M, et al.Reliability and on-line evaluation of IGBT modules under high temperature[J]. Transactions of China Electrotechnical Society, 2014, 29(6): 17-23.
[29] ABUELNAGA A, NARIMANI M, BAHMAN A S.A review on IGBT module failure modes and lifetime testing[J]. IEEE access, 2021, 9: 9643-9663.