RESEARCH PROGRESS ON GENERATION MECHANISM OF SILICON FINES ON SURFACE OF GRANULAR SILICON AND ITS INFLUENCE ON CZOCHRALSKI MONOCRYSTALLINE SILICON AND ITS ELIMINATION METHOD

Rao Yongxian; Li Jie; Huang Huyixiong; Zhang Jinbing; Hu Dongli

doi:10.19912/j.0254-0096.tynxb.2024-2318

PDF(2011 KB)

Acta Energiae Solaris Sinica ›› 2026, Vol. 47 ›› Issue (5) : 620-626. DOI: 10.19912/j.0254-0096.tynxb.2024-2318

RESEARCH PROGRESS ON GENERATION MECHANISM OF SILICON FINES ON SURFACE OF GRANULAR SILICON AND ITS INFLUENCE ON CZOCHRALSKI MONOCRYSTALLINE SILICON AND ITS ELIMINATION METHOD

Rao Yongxian^1,2, Li Jie^2,3, Huang Huyixiong^2,3, Zhang Jinbing², Hu Dongli^1,2

Author information +

History +

Abstract

High-purity polysilicon is the main raw material for solar photovoltaics and semiconductors, and its preparation methods mainly include the modified Siemens process and the silane fluidized bed reactor （FBR） process. Due to the specificity of the processes, the silicon fines content in granular polysilicon produced by the silane FBR process is higher than that of rod-shaped silicon produced by the modified Siemens process, which can lead to severe impacts on the thermal field and equipment during the subsequent producing of the Czochralski monocrystalline silicon and also affect the quality of the monocrystalline silicon. Currently, research on dedusting of granular silicon is still in its infancy, and the dust removal methods commonly used in the market are typically physical separation methods, but the effectiveness is not significant. This paper analyzes the causes of fines formation in the silane FBR process, elaborates on the impact of silicon fines on Czochralski monocrystalline silicon and corresponding control measures, and summarizes the current research status of dedusting of granular silicon. Finally, suggestions for future research and development related to the turbidity of granular silicon are proposed.

Key words

polysilicon / granular materials / turbidity / Czochralski growth / silicon fines / dust removal technology

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations

Rao Yongxian, Li Jie, Huang Huyixiong, Zhang Jinbing, Hu Dongli. RESEARCH PROGRESS ON GENERATION MECHANISM OF SILICON FINES ON SURFACE OF GRANULAR SILICON AND ITS INFLUENCE ON CZOCHRALSKI MONOCRYSTALLINE SILICON AND ITS ELIMINATION METHOD[J]. Acta Energiae Solaris Sinica. 2026, 47(5): 620-626 https://doi.org/10.19912/j.0254-0096.tynxb.2024-2318

References

[1] 吕铖钢. 资源保护视域下资源税法律制度的完善[J]. 重庆工商大学学报: 社会科学版, 2016, 33(5): 85-93.
LYU C G.On perfection of laws and regulations for resource tax under resource protection perspective[J]. Journal of Chongqing Technology and Business University: social science edition, 2016, 33(5): 85-93.
[2] 王阳. 太阳能光伏产业技术分析报告[J]. 高科技与产业化, 2019(7): 38-43.
WANG Y.An industrial and technical analysis report of solar PV[J]. High-technology & commercialization, 2019(7): 38-43.
[3] 张云龙, 陈新亮, 周忠信, 等. 晶体硅太阳电池研究进展[J]. 太阳能学报, 2021, 42(10): 49-60.
ZHANG Y L, CHEN X L, ZHOU Z X, et al.Research progress of crystalline silicon solar cells[J]. Acta energiae solaris sinica, 2021, 42(10): 49-60.
[4] 姚玉璧, 郑绍忠, 杨扬, 等. 中国太阳能资源评估及其利用效率研究进展与展望[J]. 太阳能学报, 2022, 43(10): 524-535.
YAO Y B, ZHENG S Z, YANG Y, et al.Progress and prospects on solar energy resource evaluation and utilization efficiency in China[J]. Acta energiae solaris sinica, 2022, 43(10): 524-535.
[5] LAI S, DUDUKOVIC M P, RAMACHANDRAN P A.Chemical vapor deposition and homogeneous nucleation in fluidized bed reactors: silicon from silane[J]. Chemical engineering science, 1986, 41(4): 633-641.
[6] O'MARA W, HERRING R B, HUNT L P. Handbook of semiconductor silicon technology[M]. Johannesburg: Crest Publishing House, 2007.
[7] CHEN H, JIE Y, YAN H, et al.Numerical simulation and validation of reaction mechanism for the Siemens process in silicon production[J]. Journal of crystal growth, 2023, 618: 127314.
[8] 杨伟强, 王宁, 李良. 流化床法制备颗粒多晶硅的研究现状[J]. 中国氯碱, 2023(3): 32-37.
YANG W Q, WANG N, LI L.Research status of preparation of granular polysilicon by fluidized bed method[J]. China chlor-alkali, 2023(3): 32-37.
[9] 王美娟, 慕道炎, 侯海波, 等. 国内多晶硅生产工艺发展探讨[J]. 四川化工, 2023, 26(5): 5-8,13.
WANG M J, MU D Y, HOU H B, et al.Discussion on the development of polycrystalline silicon preparation process in China[J]. Sichuan chemical industry, 2023, 26(5): 5-8,13.
[10] 田博, 黄国强. 硅烷流化床制备粒状多晶硅的研究进展[J]. 化工进展, 2016, 35(11): 3392-3399.
TIAN B, HUANG G Q.Research process on preparation of granular polysilicon by fluidized-bed silane pyrolysis[J]. Chemical industry and engineering process, 2016, 35(11): 3392-3399.
[11] 潘翔. 颗粒硅技术和市场现状探讨[EB/OL]. https://www.iyanbao.com/pdfid=12884&keyword=%E9%A2%97%E7%B2%92%E7%A1%85%E6%8A%80%E6%9C%AF%E5%92%8C%E5%B8%82%E5%9C%BA%E7%8E%B0%E7%8A%B6%E6%8E%A2%E8%AE%A8%20&show=true,2020.
PAN X.Discussion on the technology and market status of granular silicon[EB/OL]. https://www.iyanbao.com/pdfid=12884&keyword=%E9%A2%97%E7%B2%92%E7%A1%85%E6%8A%80%E6%9C%AF%E5%92%8C%E5%B8%82%E5%9C%BA%E7%8E%B0%E7%8A%B6%E6%8E%A2%E8%AE%A8%20&show=true,2020.
[12] HSU G, HOGLE R, ROHATGI N, et al.Fines in fluidized bed silane pyrolysis[J]. Journal of the Electrochemical Society, 1984, 131(3): 660-663.
[13] MURTHY T U M S, MIYAMOTO N, SHIMBO M, et al. Gas-phase nucleation during the thermal decomposition of silane in hydrogen[J]. Journal of crystal growth, 1976, 33(1): 1-7.
[14] KIMURA T, KOJIMA T. Numerical model of a fluidized bed reactor for polycrystalline silicon production-estimation of CVD and fines formation[J]. Le journal de physique Ⅳ, 1991, 2(C2): C2-103-C2-110.
[15] HEADY R B, CAHN J W.Experimental test of classical nucleation theory in a liquid-liquid miscibility gap system[J]. The journal of chemical physics, 1973, 58(3): 896-910.
[16] PRAKASH A, BAPAT A P, ZACHARIAH M R.A simple numerical algorithm and software for solution of nucleation, surface growth, and coagulation problems[J]. Aerosol science and technology, 2003, 37(11): 892-898.
[17] KRUIS F E, SCHOONMAN J, SCARLETT B.Homogeneous nucleation of silicon[J]. Journal of aerosol science, 1994, 25(7): 1291-1304.
[18] BREILAND W G, COLTRIN M E, HO P.Comparisons between a gas‐phase model of silane chemical vapor deposition and laser‐diagnostic measurements[J]. Journal of applied physics, 1986, 59(9): 3267-3273.
[19] HO P, COLTRIN M E, BREILAND W G.Laser-induced fluorescence measurements and kinetic analysis of Si atom formation in a rotating disk chemical vapor deposition reactor[J]. The journal of physical chemistry, 1994, 98(40): 10138-10147.
[20] YUUKI A, MATSUI Y, TACHIBANA K.A numerical study on gaseous reactions in silane pyrolysis[J]. Japanese journal of applied physics, 1987, 26(5R): 747.
[21] GIUNTA C J, MCCURDY R J, CHAPPLE-SOKOL J D, et al. Gas-phase kinetics in the atmospheric pressure chemical vapor deposition of silicon from silane and disilane[J]. Journal of applied physics, 1990, 67(2): 1062-1075.
[22] ONISCHUK A A, STRUNIN V P, SAMOILOVA R I, et al.Chemical composition and bond structure of aerosol particles of amorphous hydrogenated silicon forming from thermal decomposition of silane[J]. Journal of aerosol science, 1997, 28(8): 1425-1441.
[23] KREMER D M, DAVIS R W, MOORE E F, et al.A numerical investigation of the effects of gas-phase particle formation on silicon film deposition from silane[J]. Journal of crystal growth, 2003, 247(3/4): 333-356.
[24] FILTVEDT W O, MONGSTAD T, HOLT A, et al.Production of silicon from SiH₄ in a fluidized bed, operation and results[J]. International journal of chemical reactor engineering, 2013, 11(1): 57-68.
[25] PURNELL J H, WALSH R.The pyrolysis of monosilane[J]. Proceedings of the royal society of London series a mathematical and physical sciences, 1966, 293(1435): 543-561.
[26] 李佑楚. 流态化过程工程导论[M]. 北京: 科学出版社, 2008: 487-488.
LI Y C.Introduction to fluidization process engineering[M]. Beijing: Science Press, 2008: 487-488.
[27] 周声浪. 颗粒硅在N型单晶中的应用分析[C]//第十九届中国太阳级硅及光伏发电研讨会(19th CSPV), 西安, 陕西, 2023.
ZHOU S L.Application analysis of granular silicon in N-type single crystal[C]//19th China Solar Grade Silicon and Photovoltaic Power Generation Symposium (19th CSPV),Xi'an, Shanxi, 2023.
[28] GB/T 35307—2023, 流化床法颗粒硅[S].
GB/T 35307—2023,Granular polysilicon produced by fluidized bed method[S].
[29] 左辉. 浊度的检测原理及方法[J]. 中国计量, 2012(4): 86-88.
ZUO H.Principles and methods of turbidity detection[J]. China metrology, 2012(4): 86-88.
[30] HJ1075—2019, 水质浊度的测定浊度计法[S].
HJ1075—2019,Water quality-Determination of turbidity-Nephelometry[S].
[31] 陈其国, 苏芳芳, 赵彦清, 等. 一种颗粒硅除尘系统[P]. 中国: CN220111326U, 2023-05-31.
CHEN Q G, SU F F, ZHAO Y Q, et al. A dust removal system for granular silicon[P]. China: CN220111326U, 2023-05-31.