With the advancement of crystalline silicon solar cell technology, tunneling oxide passivatel contact （TOPCon） solar cells have gradually become the dominant technology in industrial silicon solar cells. An ultra-thin silicon oxide （SiOx） layer was fabricated by combining wet oxidation with plasma-enhanced oxidation （PEO） methods. The effects of different film thickness combinations on the uniformity of the SiOx layer, as well as on the appearance, passivation performance and electrical properties of TOPCon solar cells, were investigated. The results demonstrate that as the thickness of the wet oxidation layer increases and the thickness of the PEO layer decreases, the uniformity of the SiOx film gradually improves, while the Grade A yield, passivation performance and electrical properties of the cells first increase and then decrease. When the wet oxidation layer thickness is 0.6 nm and the PEO layer thickness is 1 nm, the Grade A yield, passivation performance and electrical properties of the solar cells reach the optimal level. At this point, the Grade A yield of the cells reaches 97.09%, the minority carrier lifetime τ reaches 1859 μs, the implied open-circuit voltage （iVoc） and recombination current density （J0） are 742 mV and 6.99 fA/cm², respectively, and the conversion efficiency is 26.42%.
Key words
crystalline silicon solar cells /
passivated contact cells /
silicon oxide films /
plasma oxidation /
wet oxidation
{{custom_sec.title}}
{{custom_sec.title}}
{{custom_sec.content}}
References
[1] 刘碧慧, 银锐明, 李鹏飞, 等. 工业化高效太阳能电池的研究进展[J]. 广东化工, 2023, 50(10): 87-89.
LIU B H, YIN R M, LI P F, et al.Research progress of industrially high-efficiency solar cells[J]. Guangdong chemical industry, 2023, 50(10): 87-89.
[2] 马亚苹. TOPCon光伏电池技术研究进展综述[J]. 中国粉体工业, 2024(2): 3-6.
MA Y P.Review on the research progress of TOPCon photovoltaic cell technology[J]. China powder industry, 2024(2): 3-6.
[3] 任程超, 周佳凯, 张博宇, 等. 基于隧穿氧化物钝化接触的高效晶体硅太阳电池的研究现状与展望[J]. 物理学报, 2021, 70(17): 47-57.
REN C C, ZHOU J K, ZHANG B Y, et al.Status and prospective of high-efficiency c-Si solar cells based on tunneling oxide passivation contacts[J]. Acta physica sinica, 2021, 70(17): 47-57.
[4] 钱金忠, 左克祥, 王安, 等. TOPCon太阳电池中多晶硅层磷掺杂工艺的优化及其对电性能的影响[J]. 太阳能, 2023(9): 54-59.
QIAN J Z, ZUO K X, WANG A, et al.Optimization of phosphorus doping process for poly-Si layer in TOPCon solar cells and its effect on electrical performance[J]. Solar energy, 2023(9): 54-59.
[5] GUO X Q, LIAO M D, RUI Z, et al.Comparison of different types of interfacial oxides on hole-selective p+-poly-Si passivated contacts for high-efficiency c-Si solar cells[J]. Solar energy materials and solar cells, 2020, 210: 110487.
[6] HUANG J B, ZHAO Z C, LI M, et al.Effect of plasma-assisted N2O/Ar oxidation on TOPCon solar cells[J]. Solar energy materials and solar cells, 2023, 260: 112489.
[7] LOZAC'H M, NUNOMURA S, MATSUBARA K. Double-sided TOPCon solar cells on textured wafer with ALD SiOx layer[J]. Solar energy materials and solar cells, 2020, 207: 110357.
[8] LIU Z K, LIN N, ZHANG Q S, et al.24.4% industrial tunnel oxide passivated contact solar cells with ozone-gas oxidation nano SiOx and tube PECVD prepared in-situ doped polysilicon[J]. Solar energy materials and solar cells, 2022, 243: 111803.
[9] MATSUMOTO T, NAKAJIMA H, IRISHIKA D, et al.Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells[J]. Applied surface science, 2017, 395: 56-60.
[10] TONG H, LIAO M D, ZHANG Z, et al.A strong-oxidizing mixed acid derived high-quality silicon oxide tunneling layer for polysilicon passivated contact silicon solar cell[J]. Solar energy materials and solar cells, 2018, 188: 149-155.
[11] MA D, LIU W, XIAO M J, et al.Highly improved passivation of PECVD p-type TOPCon by suppressing plasma-oxidation ion-bombardment-induced damages[J]. Solar energy, 2022, 242: 1-9.
[12] DING D, DU D X, QUAN C, et al.Application of dual-layer polysilicon deposited by PECVD in n-type TOPCon solar cells[J]. Solar energy materials and solar cells, 2023, 261: 112519.
[13] GALLENI L, FıRAT M, RADHAKRISHNAN H S, et al. Mechanisms of charge carrier transport in polycrystalline silicon passivating contacts[J]. Solar energy materials and solar cells, 2021, 232: 111359.
[14] WANG Q Q, WU W P, YUAN N Y, et al.Influence of SiOx film thickness on electrical performance and efficiency of TOPCon solar cells[J]. Solar energy materials and solar cells, 2020, 208: 110423.
[15] 凡金星, 刘绍洋, 高纪凡. TOPCon太阳电池背面叠层poly工艺的优化及其对电性能的影响[J]. 太阳能, 2024(4): 73-79.
FAN J X, LIU S Y, GAO J F.Optimization of back stacking poly process and its impact on electrical performance of TOPCon solar cells[J]. Solar energy, 2024(4): 73-79.
[16] MA S, LIAO B, QIAO F Y, et al.24.7% industrial tunnel oxide passivated contact solar cells prepared through tube PECVD integrating with plasma-assisted oxygen oxidation and in-situ doped polysilicon[J]. Solar energy materials and solar cells, 2023, 257: 112396.
PDF(2012 KB)
