MONITORING METHOD FOR BRANCH FAILURE OF MULTI-CHIP IGBT MODULES BASED ON GATE CURRENT

Du Mingxing; Qiao Haotian; Yang Jianxiong; Yin Jinliang

doi:10.19912/j.0254-0096.tynxb.2025-0968

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Acta Energiae Solaris Sinica ›› 2026, Vol. 47 ›› Issue (4) : 190-200. DOI: 10.19912/j.0254-0096.tynxb.2025-0968

MONITORING METHOD FOR BRANCH FAILURE OF MULTI-CHIP IGBT MODULES BASED ON GATE CURRENT

Du Mingxing, Qiao Haotian, Yang Jianxiong, Yin Jinliang

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Abstract

To address the challenge of monitoring chip branch failures in multi-chip parallel IGBT modules, this paper proposes a method for characterizing the health status of multi-chip IGBT modules using gate current peak as an aging-sensitive parameter. Taking multi-chip IGBT modules as the research object, the study analyzes the impact of chip branch failures caused by bond wire detachment on the dynamic charging characteristics of the gate capacitor during the conduction process of module, and further investigates the relationship between chip branch failures and changes in gate current. The effectiveness of this method is then verified through experiments. The results demonstrate that the method is less affected by junction temperature, collector-emitter voltage, gate external resistance, and gate drive voltage. Finally, through comparative experiments using a peak monitoring circuit, the study shows that the proposed gate current-based method can effectively be used for reliability assessment of multi-chip IGBT modules in photovoltaic inverters.

Key words

power semiconductor modules / IGBT modules / power inverters / bond wire aging / chip branch failure / gate current

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Du Mingxing, Qiao Haotian, Yang Jianxiong, Yin Jinliang. MONITORING METHOD FOR BRANCH FAILURE OF MULTI-CHIP IGBT MODULES BASED ON GATE CURRENT[J]. Acta Energiae Solaris Sinica. 2026, 47(4): 190-200 https://doi.org/10.19912/j.0254-0096.tynxb.2025-0968

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