从理论上探究在背面和双面入射情况下背界面复合对具有明显肖特基势垒的超薄CIGSe太阳电池性能的影响,详细讨论增加Sb所带来的背界面复合和空穴传输两种矛盾的电学效应的权衡关系。结果表明,背面和双面入射时背界面附近会有更多的光生载流子,导致光生电子背复合对电池性能的影响尤为重要。在背面入射下,光生电子背复合占据主导地位,钝化背界面有利于电池效率的提升。这与正面入射下增加Sb有助于提升电池效率的变化趋势是相反的。双面入射时,随着背面入射强度的增加,增加Sb所引起的光生电子背复合效应的损失会逐渐超过空穴传输效应的增益,导致在高的Sb范围内电池效率提升不明显。正向吸收层梯度带隙的引入极大缓解双面入射时背界面对光生电子的复合,可显著提升电池性能。
Abstract
The influence of back interface recombination on the performance of ultrathin CIGSe solar cells under rear and bifacial illumination is theoretically investigated. And it shows that there exists a trade-off between two contradictory electrical effects, namely back interface recombination and hole transport, caused by increasing Sb. The results show that more photogenerated carriers are generated near the back interface under rear and bifacial illumination, leading to the fact that the back recombination of photogenerated electrons is particularly important to cell performance. The dominant back recombination of photogenerated electrons is observed under rear illumination, so a back interface passivation is beneficial to cell efficiency. This poses a sharp contrast to the trend of cell efficiency under front illumination where enhancing Sb can improve cell efficiency. Under bifacial illumination, as the intensity of rear illumination increases, the loss due to the back recombination of photogenerated electrons surpasses the gain from the hole transport effect with the increase of Sb. Thus, the improvement of cell efficiency in high Sb is moderate. The introduction of a forward absorber gradient band gap mitigates the back recombination of photogenerated electrons under bifacial illumination and enhances cell performance significantly.
关键词
超薄CIGSe太阳电池 /
双面入射 /
肖特基势垒 /
背界面复合 /
空穴传输
Key words
ultrathin CIGSe solar cells /
bifacial illumination /
Sschottky barrier /
back interface recombination /
hole transport
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