该文研究硼重掺杂发射极的表面形貌和硼扩散工艺对光照钝化区域和金属接触区域的钝化性能、接触性质和寄生吸收以及电池性能的影响。对比抛光样品,制绒样品具有更低接触电阻测试值（2.5~3.2 mΩ·cm2）才能实现高效局域p++接触的p-TOPCon电池设计。采用3000 s的硼扩推进时间和更低接触电阻的新AgAl栅线接触（0.5 mΩ·cm2）,权衡金属接触区域的接触性能、光照区域的光电特性和生产成本的影响,将局域p++接触的p-TOPCon电池模拟效率提高至24.62%。
Abstract
This work investigates the effects of the surface morphology and boron diffusion process of boron heavily doped emitter on the passivation properties, contact property and parasitic absorption in the illuminated passivation region and metal contact region, and solar cell performance. Compared with the polished samples, the textured samples show a lower contact resistance of 2.5-3.2 mΩ·cm2, allowing a higher efficiency for p-TOPCon solar cells with localized p++ contact. By using the boron driving-in-time of 3000 s and the new AgAl contact with a lower contact resistance of 0.5 mΩ·cm2, the contact characteristics of the metal contact area, the photoelectric characteristics of the passivated area, and the production cost of the boron diffusion are optimized. The optimized p-TOPCon solar cells achieve an efficiency of 24.62%.
关键词
太阳电池 /
晶体硅 /
光电设计 /
TOPCon /
硼重扩散 /
局域接触 /
模拟计算
Key words
solar cell /
crystalline silicon /
optoelectronic design /
TOPCon /
heavy boron diffusion /
local contact /
simulated calculation
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基金
国家自然科学基金（62025403; U23A20354）; 浙江省科技厅领雁计划（2022C01215; 2024C01092）
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