利用STR公司开发设计的专业晶体生长模拟软件CGSim,结合晶体动力学和热力学,选用N型单晶硅常用掺杂剂磷,按多晶硅质量的10-7倍添加磷单质作掺杂剂,选取8种不同坩埚转速7~14 r/min,6种不同晶体转速6~11 r/min,在更高拉晶速率1.8 mm/min下做正交模拟实验得到电阻率变化。通过分析内坩埚熔体温场及流场、外坩埚熔体温场及流场、固液界面、晶体中缺陷等参数,得出合适的坩埚转速、晶体转速,与固液界面处的磷浓度转换为电阻率得到的径向电阻率变化做对比,探讨连续直拉单晶硅径向电阻率的影响机理。
Abstract
Utilizing CGSim, a professional crystal growth simulation software developed and designed by STR, combining crystal dynamics and thermodynamics, selecting N-type monocrystalline silicon commonly used dopant phosphorus is selected, according to the polycrystalline silicon mass of 10-7 times to add phosphorus monomers as dopant, meanwhile selecting eight different crucible rotate speeds of 7-14 r/min and six different crystal rotate speeds of 6-11 r/min are selected, and orthogonal simulation experiments with a higher crystal pulling rate of 1.8 mm/min were conducted to obtain the change of electrical resistivity. By analyzing the parameters of inner crucible melt temperature field and flow field, outer crucible melt temperature field and flow field, solid-liquid interface, defects in the crystal, appropriate crucible rotational speed and crystal rotational speed were obtained. By comparing with the radial resistivity change obtained by converting the phosphorus concentration to the resistivity at the solid-liquid interface, the influencing mechanism of the radial resistivity of the continuous direct-drawing monocrystalline silicon was researched.
关键词
单晶硅 /
固液界面 /
数值模拟 /
电阻率
Key words
monocrystalline silicon /
solid-liquid interface /
numerical simulation /
resistivity
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基金
国家自然科学基金（51962030）; 宁夏自治区重大项目（2024ZDYF1254）; 银川市科技创新项目（2022XQZD006）
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