颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展

饶永娴; 李杰; 黄虎一雄; 章金兵; 胡动力

doi:10.19912/j.0254-0096.tynxb.2024-2318

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太阳能学报 ›› 2026, Vol. 47 ›› Issue (5) : 620-626. DOI: 10.19912/j.0254-0096.tynxb.2024-2318

颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展

饶永娴^1,2, 李杰^2,3, 黄虎一雄^2,3, 章金兵², 胡动力^1,2

作者信息 +

RESEARCH PROGRESS ON GENERATION MECHANISM OF SILICON FINES ON SURFACE OF GRANULAR SILICON AND ITS INFLUENCE ON CZOCHRALSKI MONOCRYSTALLINE SILICON AND ITS ELIMINATION METHOD

Rao Yongxian^1,2, Li Jie^2,3, Huang Huyixiong^2,3, Zhang Jinbing², Hu Dongli^1,2

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文章历史 +

摘要

高纯多晶硅是太阳能光伏和半导体的主要原材料,其制备方法主要有改良西门子法和硅烷流化床法。由于工艺的特殊性,硅烷流化床法制得的颗粒多晶硅中的硅粉含量比改良西门子法制得的棒状硅要高,这会在后续直拉单晶的过程中对热场和设备造成严重影响,同时还会影响单晶硅的质量。目前关于颗粒硅除尘的研究还处于起步阶段,市场上使用的除尘方法通常为物理分离法,但除尘效果并不显著。该文分析硅烷流化床法中硅粉形成的原因,阐述硅粉对直拉单晶硅的影响及相应的控制措施,并总结颗粒硅除尘的研究现状。最后,对未来有关颗粒硅浊度的研究发展提出建议。

Abstract

High-purity polysilicon is the main raw material for solar photovoltaics and semiconductors, and its preparation methods mainly include the modified Siemens process and the silane fluidized bed reactor （FBR） process. Due to the specificity of the processes, the silicon fines content in granular polysilicon produced by the silane FBR process is higher than that of rod-shaped silicon produced by the modified Siemens process, which can lead to severe impacts on the thermal field and equipment during the subsequent producing of the Czochralski monocrystalline silicon and also affect the quality of the monocrystalline silicon. Currently, research on dedusting of granular silicon is still in its infancy, and the dust removal methods commonly used in the market are typically physical separation methods, but the effectiveness is not significant. This paper analyzes the causes of fines formation in the silane FBR process, elaborates on the impact of silicon fines on Czochralski monocrystalline silicon and corresponding control measures, and summarizes the current research status of dedusting of granular silicon. Finally, suggestions for future research and development related to the turbidity of granular silicon are proposed.

导出引用

饶永娴, 李杰, 黄虎一雄, 章金兵, 胡动力. 颗粒硅表面硅粉产生机制及其对直拉单晶硅的影响与消除方法的研究进展[J]. 太阳能学报. 2026, 47(5): 620-626 https://doi.org/10.19912/j.0254-0096.tynxb.2024-2318

Rao Yongxian, Li Jie, Huang Huyixiong, Zhang Jinbing, Hu Dongli. RESEARCH PROGRESS ON GENERATION MECHANISM OF SILICON FINES ON SURFACE OF GRANULAR SILICON AND ITS INFLUENCE ON CZOCHRALSKI MONOCRYSTALLINE SILICON AND ITS ELIMINATION METHOD[J]. Acta Energiae Solaris Sinica. 2026, 47(5): 620-626 https://doi.org/10.19912/j.0254-0096.tynxb.2024-2318

中图分类号： TQ127.2

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