为提升隧穿氧化钝化接触（TOPCon）太阳电池的钝化性能,采用湿法氧化结合等离子体增强氧化（PEO）技术制备超薄氧化硅（SiOx）层,研究了不同膜层厚度匹配对SiOx膜层的均匀性以及对TOPCon太阳电池的外观、钝化性能以及电性能的影响。研究表明,随着湿法氧化层厚度的增加,PEO氧化层厚度的降低,SiOx膜层的均匀性逐渐提升,电池片的A级品率、钝化性能和电性能则先增加后降低。当湿法氧化层厚度为0.6 nm,PEO氧化层厚度为1 nm时,电池片的A级品率、钝化性能和电性能最佳,此时电池片的A级品率达到97.09%,少数载流子寿命τ最高,为1859 μs,隐含开路电压iVoc和复合电流密度J0分别为742 mV和6.99 fA/cm2,转换效率为26.42%。
Abstract
With the advancement of crystalline silicon solar cell technology, tunneling oxide passivatel contact （TOPCon） solar cells have gradually become the dominant technology in industrial silicon solar cells. An ultra-thin silicon oxide （SiOx） layer was fabricated by combining wet oxidation with plasma-enhanced oxidation （PEO） methods. The effects of different film thickness combinations on the uniformity of the SiOx layer, as well as on the appearance, passivation performance and electrical properties of TOPCon solar cells, were investigated. The results demonstrate that as the thickness of the wet oxidation layer increases and the thickness of the PEO layer decreases, the uniformity of the SiOx film gradually improves, while the Grade A yield, passivation performance and electrical properties of the cells first increase and then decrease. When the wet oxidation layer thickness is 0.6 nm and the PEO layer thickness is 1 nm, the Grade A yield, passivation performance and electrical properties of the solar cells reach the optimal level. At this point, the Grade A yield of the cells reaches 97.09%, the minority carrier lifetime τ reaches 1859 μs, the implied open-circuit voltage （iVoc） and recombination current density （J0） are 742 mV and 6.99 fA/cm², respectively, and the conversion efficiency is 26.42%.
关键词
晶体硅太阳电池 /
钝化接触电池 /
氧化硅薄膜 /
等离子体氧化 /
湿法氧化
Key words
crystalline silicon solar cells /
passivated contact cells /
silicon oxide films /
plasma oxidation /
wet oxidation
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